• DocumentCode
    3250638
  • Title

    Homogeneous transport in silicon dioxide using the spherical-harmonics expansion of the BTE

  • Author

    Scozzoli, L. ; Reggiani, S. ; Rudan, M.

  • Author_Institution
    DEIS, Bologna Univ., Italy
  • fYear
    1999
  • fDate
    1999
  • Firstpage
    251
  • Lastpage
    254
  • Abstract
    The spherical-harmonics expansion (SHE) method is employed to solve the Boltzmann transport equation (BTE) in SiO2. Both the polar and nonpolar electron-phonon scattering mechanisms are considered. A number of macroscopic transport properties of electrons in SiO2 are determined in the steady-state regime for an homogeneous bulk structure. The analysis shows good agreement with experiments in the low-field regime
  • Keywords
    Boltzmann equation; electron mobility; electron-phonon interactions; harmonics; silicon compounds; Boltzmann transport equation; SiO2; drift velocity; electron velocity; homogeneous bulk structure; low-field mobility; macroscopic electron transport properties; nonpolar electron-phonon scattering mechanism; polar electron-phonon scattering mechanism; spherical-harmonics expansion method; steady-state regime; Acoustic scattering; Boltzmann equation; Charge carrier processes; Electron mobility; Interpolation; Monte Carlo methods; Optical scattering; Permittivity; Phonons; Silicon compounds;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Simulation of Semiconductor Processes and Devices, 1999. SISPAD '99. 1999 International Conference on
  • Conference_Location
    Kyoto
  • Print_ISBN
    4-930813-98-0
  • Type

    conf

  • DOI
    10.1109/SISPAD.1999.799308
  • Filename
    799308
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3250638