Title :
Measurement of IGBT switching characteristics and loss using coaxial current transformer
Author :
Kumar, Vipin ; Reddy, Swetha ; Narayanan, G.
Author_Institution :
Dept. of Electr. Eng., Indian Inst. of Sci., Bangalore, India
Abstract :
Device switching times and switching energy losses are required over a wide range of practical working conditions for successful design of insulated gate bipolar transistor (IGBT) based power converters. This paper presents a cost-effective experimental setup using a co-axial current transformer for measurement of IGBT switching characteristics and switching energy loss. Measurements are carried out on a 50A, 1200V IGBT (SKM50GB123D) for different values of gate resistance, device current and junction temperature. These measurements augment the technical data available in the device datasheet.Short circuit transients are also investigated experimentally under hard switched fault as well as fault under load conditions.
Keywords :
current transformers; insulated gate bipolar transistors; power bipolar transistors; power convertors; power semiconductor switches; IGBT switching; SKM50GB123D; co-axial current transformer; coaxial current transformer; cost-effective experimental setup; device current; device switching times; gate resistance; insulated gate bipolar transistor based power converters; junction temperature; short circuit transients; switching energy losses; Current measurement; Energy loss; Insulated gate bipolar transistors; Integrated circuits; Logic gates; Semiconductor device measurement; Switches; Coaxial current transformer; fault current; insulated gate bipolar transistor (IGBT); power semiconductor device; switching characterization; switching loss;
Conference_Titel :
Power Electronics (IICPE), 2012 IEEE 5th India International Conference on
Conference_Location :
Delhi
Print_ISBN :
978-1-4673-0931-8
DOI :
10.1109/IICPE.2012.6450478
