Title :
Modification of field emitter array (FEA) tip shape by focused ion beam irradiation
Author :
Takai, M. ; Kishimoto, T. ; Yamashita, M. ; Morimoto, H.
Author_Institution :
Fac. of Eng. Sci., Osaka Univ., Japan
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Tip shapes of Si field emitter arrays (FEAs), fabricated by a conventional dry etching process, have successfully bean modified by focused ion beam (FIB) irradiation to obtain a sharp cone shape. Flat-topped Si tips could be sharpened by localized sputtering using FIBs for a short time.
Keywords :
focused ion beam technology; ion beam effects; silicon; sputtering; vacuum microelectronics; Si; dry etching; fabrication; field emitter array; focused ion beam irradiation; sputtering; tip shape; Dry etching; Electrodes; Electron beams; Fabrication; Field emitter arrays; Focusing; Ion beams; Shape; Silicon; Sputtering;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.486988
