The influence of the stacked and double material gate structures on the short channel effects in SOI MOSFETs

Author

Behnam, A. ; Fathi, Ehsan ; Hashemi, P. ; Esfandiarpoor, B. ; Fathipour, M.

Author_Institution

Dept. of ECE, Tehran Univ., Iran

fYear

2004

fDate

6-8 Dec. 2004

Firstpage

68

Lastpage

71

Abstract

An asymmetric dual metal stack gate (DMSG) SOI MOSFET transistor has been investigated for its enhanced electrical characteristics. A 2-D physical model has been proposed and its results have been confirmed by those obtained by simulation. These results predict better short channel effects such as drain induced barrier lowering (DIBL) characteristics and hot carrier effects for this device compared to those for the conventional SOI MOSFET.

Keywords

MOSFET; elemental semiconductors; hot carriers; semiconductor device models; silicon-on-insulator; surface potential; 2D physical model; SOI MOSFET; Si-SiO₂; asymmetric dual metal stack gate; drain induced barrier lowering effects; dual metal stack gate; electrical characteristics; hot carrier effects; semiconductor device simulation; short channel effect; stacked material gate structure; surface potential; Analytical models; Boundary conditions; Dielectric materials; Doping; Equations; Hot carriers; MOSFETs; Metal-insulator structures; Toxicology; Voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on

Print_ISBN

0-7803-8656-6

Type

conf

DOI

10.1109/ICM.2004.1434208

Filename

1434208