Title :
Resonant excitation of microwave acoustic modes in n-GaAs film
Author :
Grimalsky, Vladimir ; Gutierrez-D, E. ; Garcia-B, A. ; Koshevaya, S.
Author_Institution :
Dept. of Electron., INAOE, Puebla, Mexico
Abstract :
Resonant excitation of coupled space charge - acoustic waves in thin n-GaAs film is theoretically investigated. Possible mechanisms of electroacoustic coupling are piezoeffect and deformation potential. The film is placed onto a substrate i-GaAs without an acoustic contact. The film includes two-dimensional electron gas with a high negative differential conductivity. A possibility of resonant excitation of acoustic modes of the film at the first and the second harmonic of input microwave signal has been demonstrated.
Keywords :
III-V semiconductors; acoustic waves; acoustoelectric effects; deformation; gallium arsenide; semiconductor thin films; space charge waves; two-dimensional electron gas; GaAs; coupled space charge acoustic waves; deformation potential; electroacoustic coupling mechanism; high negative differential conductivity; i-GaAs substrate; microwave acoustic modes; microwave signal; piezoeffect; resonant excitation; thin n-GaAs film; two dimensional electron gas; Acoustic waves; Conductivity; Electron mobility; Equations; Frequency; Gallium arsenide; Microelectronics; Resonance; Space charge; Substrates;
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
DOI :
10.1109/ICM.2004.1434209