Resonant excitation of microwave acoustic modes in n-GaAs film

Author

Grimalsky, Vladimir ; Gutierrez-D, E. ; Garcia-B, A. ; Koshevaya, S.

Author_Institution

Dept. of Electron., INAOE, Puebla, Mexico

fYear

2004

fDate

6-8 Dec. 2004

Firstpage

72

Lastpage

75

Abstract

Resonant excitation of coupled space charge - acoustic waves in thin n-GaAs film is theoretically investigated. Possible mechanisms of electroacoustic coupling are piezoeffect and deformation potential. The film is placed onto a substrate i-GaAs without an acoustic contact. The film includes two-dimensional electron gas with a high negative differential conductivity. A possibility of resonant excitation of acoustic modes of the film at the first and the second harmonic of input microwave signal has been demonstrated.

Keywords

III-V semiconductors; acoustic waves; acoustoelectric effects; deformation; gallium arsenide; semiconductor thin films; space charge waves; two-dimensional electron gas; GaAs; coupled space charge acoustic waves; deformation potential; electroacoustic coupling mechanism; high negative differential conductivity; i-GaAs substrate; microwave acoustic modes; microwave signal; piezoeffect; resonant excitation; thin n-GaAs film; two dimensional electron gas; Acoustic waves; Conductivity; Electron mobility; Equations; Frequency; Gallium arsenide; Microelectronics; Resonance; Space charge; Substrates;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on

Print_ISBN

0-7803-8656-6

Type

conf

DOI

10.1109/ICM.2004.1434209

Filename

1434209