Title :
Minimizing body instability in deep sub-micron SOI MOSFETs for sub-1 V RF applications
Author :
Tseng, Y.-C. ; Huang, W.M. ; Mendicino, M. ; Welch, P. ; Ilderem, V. ; Woo, J.C.S.
Author_Institution :
Dept. of Electr. Eng., California Univ., Los Angeles, CA, USA
Abstract :
We report an extensive study on the SOI body instability and the noise constraint dependence on device scaling for sub-1 V RF SOI CMOS applications. Also, the device parameters associated with these issues are addressed.
Keywords :
CMOS integrated circuits; MOSFET; circuit stability; integrated circuit noise; minimisation; semiconductor device measurement; semiconductor device noise; silicon-on-insulator; 1 V; RF SOI CMOS applications; RF applications; SOI MOSFETs; SOI body instability; Si-SiO/sub 2/; body instability minimization; device parameters; device scaling; noise constraint dependence; CMOS process; Circuit noise; DVD; Impact ionization; Ink; Low-frequency noise; MOSFETs; Phase noise; Radio frequency; Voltage;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799323
