Title :
SON (silicon on nothing)-a new device architecture for the ULSI era
Author :
Jurczak, M. ; Skotnicki, T. ; Paoli, M. ; Tormen, B. ; Regolini, J.-L. ; Morin, C. ; Schiltz, A. ; Martins, J. ; Pantel, R. ; Galvier, J.
Author_Institution :
Inst. of Microelectron. & Optoelectron., Warsaw Univ. of Technol., Poland
Abstract :
A novel device architecture called SON (silicon on nothing) is proposed, allowing extremely thin buried oxides and silicon films to be fabricated and thereby provide better resistance to short channel effects (SCE) and DIBL than any other device architecture. SON devices are shown to present excellent I/sub on//I/sub off/ trade-off, V/sub th/ roll-off suppression down to 15 nm channel length, and to be free from the shortcomings of conventional SOI, such as self-heating, high S/D series resistances, and expensive SOI substrates since SON devices are fabricated on bulk silicon.
Keywords :
CMOS integrated circuits; MOSFET; ULSI; buried layers; circuit simulation; dielectric thin films; electric current; integrated circuit modelling; semiconductor thin films; silicon; silicon-on-insulator; CMOS process integration; DIBL; MOSFET; S/D series resistance; SOI substrate; SON device architecture; SON devices; ULSI; bulk silicon fabrication; channel length; device architecture; extremely thin buried oxides; on/off current trade-off; self-heating; short channel effects; silicon films; silicon on nothing; silicon-on-nothing device architecture; threshold voltage roll-off suppression; Anisotropic magnetoresistance; Dielectric substrates; Etching; Germanium silicon alloys; Lattices; MOSFET circuits; Plasma applications; Robustness; Silicon germanium; Ultra large scale integration;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799324
