Microscopic characterization of field emitter array structure and work function by scanning Maxwell-stress microscopy

Author

Itoh, J. ; Nazuka, Y. ; Inoue, T. ; Yokoyama, H. ; Kanemaru, S.

Author_Institution

Electrotech. Lab., Ibaraki, Japan

fYear

1995

fDate

July 30 1995-Aug. 3 1995

Firstpage

87

Lastpage

91

Abstract

Microscopic images of both the structures and surface potentials of various field emitter arrays (FEAs) were measured by scanning Maxwell-stress microscopy (SMM). Results of SMM measurements clearly showed nanometre-scale irregularities in the structures and structure-related surface potential distributions. From these results, work-function values have been derived for various emitter materials such as Si, Cr, Mo, W, etc. by using an Au film as a reference material; workfunction of Au was assumed as 5.1 eV. Experimental procedure and results are described in detail.

Keywords

microscopy; scanning probe microscopy; surface potential; vacuum microelectronics; work function; Cr; Mo; Si; W; field emitter array; scanning Maxwell-stress microscopy; structure; surface potential; work function; Chromium; Field emitter arrays; Force measurement; Gold; Laboratories; Niobium; Scanning electron microscopy; Silicon on insulator technology; Spatial resolution; Surface topography;

fLanguage

English

Publisher

ieee

Conference_Titel

Vacuum Microelectronics Conference, 1995. IVMC., 1995 International

Conference_Location

Portland, OR, USA

Print_ISBN

0-7803-2143-X

Type

conf

DOI

10.1109/IVMC.1995.486997

Filename

486997