DocumentCode :
3251062
Title :
94 GHz power amplifier using PHEMT technology
Author :
Marosi, L. ; Sholley, M. ; Goel, J. ; Faris, A. ; Siddiqui, M. ; Stones, D.I. ; Tan, Kokkiong
Author_Institution :
TRW Inc., Redondo Beach, CA, USA
fYear :
1995
fDate :
16-20 May 1995
Firstpage :
1597
Abstract :
A millimeter wave power amplifier has been developed using power MMICs based on 0.10 micron T-gate pseudomorphic HEMT technology. It uses four MMIC chips in parallel with a low loss 4-way power combiner with two cascaded driver amplifier stages. The amplifier module demonstrated 100 mW output power with more than 32 dB linear gain at 94 GHz. These results are attributed to the excellent device and combiner performance.<>
Keywords :
HEMT integrated circuits; cascade networks; driver circuits; field effect MIMIC; millimetre wave amplifiers; millimetre wave devices; power amplifiers; 0.10 micron; 100 mW; 32 dB; 94 GHz; InGaAs-GaAs; InGaAs/GaAs HEMT; PHEMT technology; T-gate pseudomorphic HEMT technology; cascaded driver amplifier stages; low loss 4-way power combiner; millimeter wave power amplifier; power MMICs; Driver circuits; Frequency; Gain; HEMTs; MMICs; Millimeter wave technology; PHEMTs; Power amplifiers; Power generation; Space technology;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
ISSN :
0149-645X
Print_ISBN :
0-7803-2581-8
Type :
conf
DOI :
10.1109/MWSYM.1995.406281
Filename :
406281
Link To Document :
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