DocumentCode :
3251064
Title :
A new structure of field emitter arrays
Author :
Itoh, S. ; Niiyama, T. ; Taniguchi, M. ; Watanabe, T.
Author_Institution :
Res. & Dev. Center, Futaba Corp., Chiba, Japan
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
99
Lastpage :
102
Abstract :
Applications of Spindt-type field emitters to field emitter arrays are discussed. The evaluation of a new structure which was fabricated to obtain high current density at high gate voltage without destruction is presented. The emitter arrays are stabilized using a resistive layer and a cathode electrode of mesh structure.
Keywords :
vacuum microelectronics; Spindt-type field emitters; cathode electrode; field emitter arrays; mesh structure; resistive layer; Anodes; Cathodes; Current density; Electrodes; Electron sources; Field emitter arrays; Insulation; Niobium; Voltage; Wiring;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487000
Filename :
487000
Link To Document :
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