Title :
High performance Cu interconnects with low-k BCB-polymers by plasma-enhanced monomer-vapor polymerization (PE-MVP) method
Author :
Kawahara, J. ; Nakano, A. ; Saito, S. ; Kinoshita, K. ; Onodera, T. ; Hayashi, Y.
Author_Institution :
Silicon Syst. Res. Labs., NEC Corp., Sagamihara, Japan
Abstract :
A new plasma-enhanced organic monomer-vapor polymerization (PE-MVP) method is developed for deposition of divinyl siloxane bis-benzocyclobutene (DVS-BCB) polymer films with low dielectric constant, k=2.7. The PE-MVP method eliminates polymer oxidation of DVS-BCB during polymerization, improving the thermal stability. By combining the MOCVD-Cu technique with the PE-MVP, narrow-pitch Cu/BCB damascene lines reveal a 35% reduction in the line capacitance compared to Cu/SiO/sub 2/ lines, while the interline leakage current is kept as low as 5/spl times/10/sup -9/ A/cm/sup 2/.
Keywords :
MOCVD; capacitance; copper; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; oxidation; permittivity; plasma materials processing; polymer films; polymerisation; thermal stability; vapour phase epitaxial growth; Cu; Cu interconnects; Cu-SiO/sub 2/; Cu/SiO/sub 2/ lines; DVS-BCB polymer films; MOCVD-Cu technique; PE-MVP method; dielectric constant; divinyl siloxane bis-benzocyclobutene polymer films; interline leakage current; line capacitance; low-k BCB-polymers; narrow-pitch Cu/BCB damascene lines; plasma-enhanced monomer-vapor polymerization; plasma-enhanced organic monomer-vapor polymerization; polymer oxidation; polymerization; thermal stability; Capacitance; Curing; Dielectric constant; Inductors; Leakage current; Oxidation; Plasmas; Polyimides; Polymer films; Thermal stability;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799332
