Si-MESFET technologies for low drop out regulators

Author

Wood, Steve ; Lepkowski, William ; Wilk, Seth ; Thornton, Trevor

Author_Institution

SJT Micropower Inc., Fountain Hills, AZ

fYear

2008

fDate

14-18 Sept. 2008

Firstpage

1

Lastpage

4

Abstract

Power conditioning circuits based on high breakdown voltage silicon MESFETs are being developed as an alternative to existing approaches that use CMOS or bipolar transistors. Results are presented from simulations of a low drop out (LDO) regulator as an example of the Si-MESFET technology. The LDO regulator exploits the depletion mode behavior of an n-channel MESFET to achieve low drop out voltages with impressive power supply rejection. The high voltage compliance of the Si-MESFETs (5-50V) make them ideally suited for a wide range of commercial and defense related LDO regulator applications.

Keywords

elemental semiconductors; power MESFET; silicon; voltage regulators; MESFET technology; Si; depletion mode; high breakdown voltage; low drop out voltage regulator; power conditioning circuits; Breakdown voltage; CMOS technology; Circuit simulation; Electric variables; Foundries; MESFETs; Power conditioning; Regulators; Semiconductor device modeling; Silicon;

fLanguage

English

Publisher

ieee

Conference_Titel

Telecommunications Energy Conference, 2008. INTELEC 2008. IEEE 30th International

Conference_Location

San Diego, CA

Print_ISBN

978-1-4244-2055-1

Electronic_ISBN

978-1-4244-2056-8

Type

conf

DOI

10.1109/INTLEC.2008.4664094

Filename

4664094