DocumentCode :
3251195
Title :
Body effect principle applied to RF CMOS circuits
Author :
Baptiste, Begleret Jean ; Thierry, Taris ; Herve, L.
Author_Institution :
IXL Lab., Talence, France
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
114
Lastpage :
117
Abstract :
After a theoretical and analytic study of the body effect in MOS transistors, this paper proposes two different approaches of this parasitic phenomenon. Thanks to these models, a design methodology, which takes advantage of the bulk input, can be brought into play. Thus, turning the CMOS drawback into an analog advantage, it gives an efficient alternative to overcome the CMOS VLSI wireless mass-market design constrains. In order to illustrate this advance, two RF building blocks are presented in this paper. Well suited to low power/low voltage applications, these circuits implemented in a 0.18 μm CMOS VLSI technology are well matched to multi-standard architectures and system on chip implementations.
Keywords :
CMOS integrated circuits; MOSFET circuits; VLSI; integrated circuit design; integrated circuit modelling; integrated circuit technology; low-power electronics; radiofrequency integrated circuits; system-on-chip; 0.18 micron; CMOS VLSI technology; CMOS VLSI wireless mass market design; MOS transistors; RF CMOS circuits; body effect principle; multistandard architectures; parasitic phenomenon; system on chip; CMOS technology; Circuits; Design methodology; Low voltage; MOSFETs; Radio frequency; Semiconductor device modeling; System-on-a-chip; Turning; Very large scale integration;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434221
Filename :
1434221
Link To Document :
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