Title :
CMOS versus SiGe BiCMOS: historical technology bipolarization of silicon integrated transceivers
Author :
Saias, Daniel ; Belot, Didier
Author_Institution :
STMicroelectron., Central R&D, Crolles, France
Abstract :
Part of the challenge, when issuing transceiver chips for the telecommunication market today, is not only to make a consistent choice between a set standards, but also to choose the adequate technology. Depending on the standards characteristics and the proposed architecture the choice can lead either to system on chip or to system on module solutions.
Keywords :
BiCMOS integrated circuits; CMOS integrated circuits; Ge-Si alloys; elemental semiconductors; transceivers; SiGe; SiGe BiCMOS; silicon integrated transceivers; system on chip; system on modules; telecommunication market; telecommunication standards; transceiver chips; BiCMOS integrated circuits; CMOS technology; Germanium silicon alloys; Isolation technology; Mobile handsets; Radio frequency; Silicon germanium; Telecommunication standards; Transceivers; Very large scale integration;
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
DOI :
10.1109/ICM.2004.1434222
