A review and design of the on-chip rectifiers for RF energy harvesting

Author

Haojuan Dai ; Yan Lu ; Man-Kay Law ; Sai-Weng Sin ; Seng-Pan, U. ; Martins, R.P.

Author_Institution

State Key Lab. of Analog & Mixed-Signal VLSI, Univ. of Macau, Macao, China

fYear

2015

fDate

March 30 2015-April 1 2015

Firstpage

1

Lastpage

4

Abstract

This paper presents an overview of the CMOS on-chip rectifiers for RF energy harvesting in the RFID, internet of things, or wearable device applications. The pros and cons of different RF to DC rectifier topologies are investigated, compared, and summarized. All the topologies are designed and optimized in a 65nm CMOS process, with the input power range from -10dBm to 4dBm and the load resistor range from 10kΩ to 1MΩ. The simulated results show that the cross-connected (CC) topology exhibits the highest achievable power conversion efficiency up to 65% (rectifier only), while the CC topology with the threshold voltage cancellation technique and the MOS diode topology achieve 46.7% and 51%, respectively.

Keywords

CMOS integrated circuits; Internet of Things; energy harvesting; radiofrequency identification; rectifiers; resistors; 65nm CMOS process; CMOS on-chip rectifiers; Internet-of-things; MOS diode topology; RF energy harvesting; RF-to-DC rectifier topologies; RFID; cross-connected topology; input power range; load resistor range; power conversion efficiency; threshold voltage cancellation technique; wearable device applications; CMOS integrated circuits; Energy harvesting; Radio frequency; Rectifiers; Schottky diodes; Topology; Video recording; CMOS rectifier; RF energy harvesting; RF-DC; power converter; ultra-high frequency (UHF); wireless power;

fLanguage

English

Publisher

ieee

Conference_Titel

Wireless Symposium (IWS), 2015 IEEE International

Conference_Location

Shenzhen

Type

conf

DOI

10.1109/IEEE-IWS.2015.7164642

Filename

7164642