Dielectric breakdown mechanism of thin-SiO/sub 2/ studied by the post-breakdown resistance statistics

Author

Satake, H. ; Toriumi, A.

Author_Institution

Adv. Semicond. Devices Res. Labs., Toshiba Corp., Yokohama, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

61

Lastpage

62

Abstract

We have noticed for the first time that the post-breakdown resistance of SiO/sub 2/ in MOS devices is strongly related to SiO/sub 2/ breakdown characteristics such as the polarity dependence or the oxide field dependence of charge-to-breakdown Q/sub bd/ in the statistical sense. We discuss, in this paper, the dielectric breakdown mechanism of SiO/sub 2/ from the viewpoint of the statistical correlation between the post-breakdown resistance distribution, the Q/sub bd/ distribution, and the emission energy just at the SiO/sub 2/ breakdown, by changing the stress polarity, stress field, and the oxide thickness and device area.

Keywords

MOS integrated circuits; MOSFET; dielectric thin films; electric breakdown; electric fields; electric resistance; silicon compounds; statistical analysis; MOS devices; MOSFET; SiO/sub 2/ breakdown; SiO/sub 2/ breakdown characteristics; SiO/sub 2/ dielectric breakdown mechanism; SiO/sub 2/ thin film; SiO/sub 2/-Si; charge-to-breakdown; device area; dielectric breakdown mechanism; emission energy; oxide field dependence; oxide thickness; polarity dependence; post-breakdown resistance; post-breakdown resistance distribution; post-breakdown resistance statistics; statistical correlation; stress field; stress polarity; Breakdown voltage; Design for quality; Dielectric breakdown; Electric breakdown; Electric resistance; Laboratories; Semiconductor device breakdown; Semiconductor devices; Statistics; Stress;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799340

Filename

799340