Analysis of DC properties of SDR IMPATT structure by double iterative method designed at different microwave frequency bands

Numerical computation of p⁺nn⁺ SDR IMPATT structure is carrier out at X-band and Ka-band by double iterative method involving simultaneous solution of Poisson´s equation, continuity equation and space-charge equation subject to appropriate boundary conditions for electric field and normalized current density at depletion layer edges. Temperature-dependent two-step impact ionization process is considered for analysis purpose and carrier velocities are also taken as function of electric field throughout the space-charge layer. Both drift and diffusion processes are considered for simulation purpose, and results are obtained for specified doping conditions. Breakdown voltage obtained by simulation is close to the experimental data, and percentage efficiency predicted is moderate for both the frequency bands, and hence can be considered a good theoretical estimation when design is considered for implementation.