Indium tilted channel implantation technology for 60 nm nMOSFET

We have developed a new laterally modulated channel technology that enables complete operation of 60 nm nMOSFETs using a tilted In implantation. This improves short channel immunity over the conventional device using B because of its steeper lateral profile and sufficiently high activation ratio. Using this technology, we realized roll-off free characteristics down to 100 nm with a low enough V/sub th/ of 0.18 V and 0.1 V for 60 nm nMOSFETs. We also show that there are no penalties with use of In from device or reliability points of view.