Title :
Silicon wafer bonding for sealed vacuum microelectronic devices
Author :
Qing-An Huang ; Ming Qin ; Hui-Zhen Zhang
Author_Institution :
Microelectron. Center, Southeast Univ., Nanjing, China
fDate :
July 30 1995-Aug. 3 1995
Abstract :
The formation, measurement and control of the vacuum in sealed cavities by silicon wafer bonding are discussed. The mechanism for vacuum formation is considered in detail. The vacuum within the cavity is measured to be of the order of 10/sup -2/ torr for wafer bonding in an O/sub 2/ environment. Based on silicon wafer bonding, sealed 40/spl times/40 field emission arrays have been fabricated and measured. The emission is stable.
Keywords :
electron field emission; elemental semiconductors; silicon; vacuum control; vacuum measurement; vacuum microelectronics; wafer bonding; 1E-2 torr; O/sub 2/; O/sub 2/ environment; Si; Si wafer bonding; field emission arrays; sealed cavities; sealed vacuum microelectronic devices; vacuum formation; Atmospheric measurements; Electron emission; Encapsulation; Etching; Fabrication; Microelectronics; Seals; Silicon; Vacuum technology; Wafer bonding;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487015
