DocumentCode
3251388
Title
Silicon wafer bonding for sealed vacuum microelectronic devices
Author
Qing-An Huang ; Ming Qin ; Hui-Zhen Zhang
Author_Institution
Microelectron. Center, Southeast Univ., Nanjing, China
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
159
Lastpage
163
Abstract
The formation, measurement and control of the vacuum in sealed cavities by silicon wafer bonding are discussed. The mechanism for vacuum formation is considered in detail. The vacuum within the cavity is measured to be of the order of 10/sup -2/ torr for wafer bonding in an O/sub 2/ environment. Based on silicon wafer bonding, sealed 40/spl times/40 field emission arrays have been fabricated and measured. The emission is stable.
Keywords
electron field emission; elemental semiconductors; silicon; vacuum control; vacuum measurement; vacuum microelectronics; wafer bonding; 1E-2 torr; O/sub 2/; O/sub 2/ environment; Si; Si wafer bonding; field emission arrays; sealed cavities; sealed vacuum microelectronic devices; vacuum formation; Atmospheric measurements; Electron emission; Encapsulation; Etching; Fabrication; Microelectronics; Seals; Silicon; Vacuum technology; Wafer bonding;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487015
Filename
487015
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