Title :
Quantum effect in oxide thickness determination from capacitance measurement
Author :
Yang, K. ; Ya-Chin King ; Chenming Hu
Author_Institution :
Dept. of Electr. Eng. & Comput. Sci., California Univ., Berkeley, CA, USA
Abstract :
Simple quantitative models of charge displacement due to the quantum effect and its influence on gate oxide thickness measurements are presented. An effective oxide thickness (T/sub DC/) is introduced which is relevant to MOSFET current modeling. Physical oxide thickness and T/sub DC/ can be extracted easily from capacitance measurement, and the electrical thickness can be predicted from a target physical thickness using these new models.
Keywords :
MOSFET; capacitance measurement; quantum interference phenomena; semiconductor device measurement; semiconductor device models; thickness measurement; MOSFET current modeling; SiO/sub 2/-Si; capacitance measurement; charge displacement models; effective oxide thickness; electrical thickness; gate oxide thickness measurements; oxide thickness determination; physical oxide thickness; quantitative models; quantum effect; target physical thickness; Capacitance measurement; Capacitance-voltage characteristics; Charge carrier processes; Current measurement; Data mining; Ellipsometry; MOSFET circuits; Predictive models; Quantum computing; Thickness measurement;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799348
