DocumentCode
3251562
Title
Ion bombardment sharpening of field emitter arrays
Author
Auciello, O. ; Yadon, L. ; Temple, D. ; Mancusi, J.E. ; McGuire, G.E. ; Hirsch, E. ; Gray, H.F. ; Tang, C.M.
Author_Institution
Electron. Technol. Div., MCNC, Research Triangle Park, NC, USA
fYear
1995
fDate
July 30 1995-Aug. 3 1995
Firstpage
192
Lastpage
196
Abstract
First results are presented on controlled ion bombardment sharpening of ungated and gated field emitter arrays (FEAs). The initial results indicate that controlled ion bombardment can produce sharpening of emitter tips in very short periods of time while maintaining the FEAs at, or close to, room temperature.
Keywords
electron field emission; ion beam applications; vacuum microelectronics; FEA fabrication; emitter tips; field emitter arrays; gated field emitter arrays; ion bombardment sharpening; ungated field emitter arrays; Electrodes; Electron emission; Field emitter arrays; Heating; Ion beams; Oxidation; Performance analysis; Scanning electron microscopy; Surfaces; Temperature;
fLanguage
English
Publisher
ieee
Conference_Titel
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location
Portland, OR, USA
Print_ISBN
0-7803-2143-X
Type
conf
DOI
10.1109/IVMC.1995.487023
Filename
487023
Link To Document