Inhibition Effect of Twins to Grain Growth in ZnO Varistors

Author

He, Jinliang ; Hu, Jun ; Tu, Youping ; Ding, Lijian ; Han, Se-Won ; Cho, Han-Goo

Author_Institution

Dept. of Electr. Eng., Tsinghua Univ., Beijing

fYear

2006

fDate

38869

Firstpage

971

Lastpage

974

Abstract

By comparing the experimental results of two different systems ZnO varistors, we identify that Sb₂O₃ is the origin of twinning in commercial ZnO varistors. The additive of Bi₂O ₃ weakens the effect of Sb₂O₃ to form twins while the Al₂O₃ dopant strengthens the twinning. The twins have obvious effect to inhibit ZnO grain growth and uniform its microstructure, because the formed twins result in increasing the mobility viscosity of ZnO grain and grain boundary, and making them dragged during the sintering course

Keywords

II-VI semiconductors; alumina; antimony compounds; bismuth compounds; grain growth; sintering; twin boundaries; twinning; varistors; viscosity; zinc compounds; Al₂O₃; Bi₂O₃; Sb₂O₃; ZnO; dopant materials; grain boundary; grain growth; inhibition effect; microstructure; semiconductors varistors; sintering; twin boundaries; twinning; viscosity; Additives; Ceramics; Grain size; Helium; Microstructure; Performance analysis; Power systems; Varistors; Viscosity; Zinc oxide; ZnO varistor; dopant; grain growth; twin;

fLanguage

English

Publisher

ieee

Conference_Titel

Properties and applications of Dielectric Materials, 2006. 8th International Conference on

Conference_Location

Bali

Print_ISBN

1-4244-0189-5

Electronic_ISBN

1-4244-0190-9

Type

conf

DOI

10.1109/ICPADM.2006.284340

Filename

4062829