Title :
Inhibition Effect of Twins to Grain Growth in ZnO Varistors
Author :
He, Jinliang ; Hu, Jun ; Tu, Youping ; Ding, Lijian ; Han, Se-Won ; Cho, Han-Goo
Author_Institution :
Dept. of Electr. Eng., Tsinghua Univ., Beijing
Abstract :
By comparing the experimental results of two different systems ZnO varistors, we identify that Sb2O3 is the origin of twinning in commercial ZnO varistors. The additive of Bi2O 3 weakens the effect of Sb2O3 to form twins while the Al2O3 dopant strengthens the twinning. The twins have obvious effect to inhibit ZnO grain growth and uniform its microstructure, because the formed twins result in increasing the mobility viscosity of ZnO grain and grain boundary, and making them dragged during the sintering course
Keywords :
II-VI semiconductors; alumina; antimony compounds; bismuth compounds; grain growth; sintering; twin boundaries; twinning; varistors; viscosity; zinc compounds; Al2O3; Bi2O3; Sb2O3; ZnO; dopant materials; grain boundary; grain growth; inhibition effect; microstructure; semiconductors varistors; sintering; twin boundaries; twinning; viscosity; Additives; Ceramics; Grain size; Helium; Microstructure; Performance analysis; Power systems; Varistors; Viscosity; Zinc oxide; ZnO varistor; dopant; grain growth; twin;
Conference_Titel :
Properties and applications of Dielectric Materials, 2006. 8th International Conference on
Conference_Location :
Bali
Print_ISBN :
1-4244-0189-5
Electronic_ISBN :
1-4244-0190-9
DOI :
10.1109/ICPADM.2006.284340
