Hot-electron-induced effects on noise and jitter in submicron CMOS phase-locked loop circuits

Author

Zhang, Chi ; Srivastava, Ashok ; Wu, Hsiao-Chun

Author_Institution

Dept. of Electr. & Comput. Eng., Louisiana State Univ., Baton Rouge, LA

fYear

2005

fDate

7-10 Aug. 2005

Firstpage

507

Abstract

In this paper, the hot-electron-induced degradation in voltage-controlled oscillator (VCO) is investigated. A current starved VCO is designed in 0.25 mum CMOS process to verify the VCO gain degradation due to hot-carrier effects. The loop dynamics, phase noise and output clock jitter of a second order PLL are studied. The loop parameters, i.e., damping factor and natural frequency, phase noise and jitter degradations due to VCO degradation are analyzed, considering hot-carrier effects. After four hours stress, there is a 23% decrease in the damping factor and natural frequency, also 1 dB increase in phase noise and 17% increase in output RMS jitter

Keywords

CMOS integrated circuits; hot carriers; jitter; phase locked loops; voltage-controlled oscillators; 0.25 micron; CMOS process; VCO gain degradation; damping factor; hot-carrier effects; hot-electron-induced degradation; hot-electron-induced effects; jitter degradations; loop dynamics; natural frequency; output RMS jitter; phase noise; submicron CMOS phase-locked loop circuits; voltage-controlled oscillator; CMOS process; Circuit noise; Damping; Degradation; Frequency; Hot carrier effects; Jitter; Phase locked loops; Phase noise; Voltage-controlled oscillators;

fLanguage

English

Publisher

ieee

Conference_Titel

Circuits and Systems, 2005. 48th Midwest Symposium on

Conference_Location

Covington, KY

Print_ISBN

0-7803-9197-7

Type

conf

DOI

10.1109/MWSCAS.2005.1594149

Filename

1594149