DocumentCode :
3251622
Title :
Model for electrical simulation of photogate active pixel sensor
Author :
Casadei, B. ; Hu, Y. ; Dufaza, C. ; Martin, L.
Author_Institution :
Polytech Marseille, France
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
189
Lastpage :
193
Abstract :
A new electrical simulation model for photogate active pixel sensor in CMOS imagers is proposed. Review of three conventional models is done and shows lack of accuracy. Therefore photoelectric mechanisms and charges transfer of photogate pixel are analysed and lead to the definition of a Verilog-A description model. This model is then simulated into the Cadence design tool environment and simulation results show great improvements in simulation accuracy of the proposed model versus others ones.
Keywords :
CMOS image sensors; VLSI; charge exchange; electronic engineering computing; hardware description languages; photoelectricity; CMOS imagers; Cadence design tool; VLSI; Verilog-A description model; charge transfer; electrical simulation model; photoelectric mechanism; photogate active pixel sensor; CMOS image sensors; CMOS technology; Gain; Image converters; Intelligent sensors; Photodiodes; Pixel; Semiconductor device modeling; Sensor phenomena and characterization; Switches;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434242
Filename :
1434242
Link To Document :
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