• DocumentCode
    3251647
  • Title

    Modeling and comparisons of field emitter devices with variable geometries

  • Author

    Jie Nun Kang ; Jin Woo Cho ; Kim, J.M.

  • Author_Institution
    Samsung Adv. Inst. of Technol., Suwon, South Korea
  • fYear
    1995
  • fDate
    July 30 1995-Aug. 3 1995
  • Firstpage
    211
  • Lastpage
    215
  • Abstract
    We report different geometries of gated field emitter devices and their simulation results. Each geometry is defined as tip-on-post, flat cathode and bottle-neck separately. We report the optimized tip height and width of tip-on-post with best high emission current. The electric field calculation, and emission current are compared at different aspect ratios of tip-on-post cathode. Flat cathode with gate electrode demonstrates the feasibility of diamond thin film application for triode geometry with less leakage current. The calculation of electric field of flat cathode is determined by variable geometrical parameters. In this simulation, the feasibility of bottle neck field emission cathode is reported.
  • Keywords
    cathodes; diamond; electric current; electric fields; electron field emission; leakage currents; modelling; vacuum microelectronics; C; aspect ratio; bottle-neck type; diamond thin film application; electric field calculation; emission current; field emitter devices; flat cathode type; gated FEAs; leakage current reduction; tip height; tip width; tip-on-post type; triode geometry; variable geometries; Carbon dioxide; Cathodes; Diamond-like carbon; Electric variables; Electrodes; Electron emission; Fabrication; Geometry; Solid modeling; Transistors;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
  • Conference_Location
    Portland, OR, USA
  • Print_ISBN
    0-7803-2143-X
  • Type

    conf

  • DOI
    10.1109/IVMC.1995.487027
  • Filename
    487027