Work function controlled metal gate electrode on ultrathin gate insulators

Author

Nakajima, K. ; Akasaka, Y. ; Kaneko, M. ; Tamaoki, M. ; Yamada, Y. ; Shimizu, T. ; Ozawa, Y. ; Suguro, K.

Author_Institution

Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

95

Lastpage

96

Abstract

We investigated MOS characteristics of metal gate electrodes on ultrathin gate oxide. Gate leakage currents of sputtered TiN and WN/sub x/ electrodes were found to be much higher than that of CVD TiN electrodes due to metal penetration during sputtering. Moreover, the deviation of crystal orientation of the TiN was found to affect the flat band voltage. The CVD TiN film was found to be formed with highly preferred orientation and to show very stable MOS characteristics, even on 2 nm gate oxide.

Keywords

CMOS integrated circuits; CVD coatings; MOS capacitors; crystal orientation; electrodes; integrated circuit interconnections; integrated circuit metallisation; integrated circuit testing; leakage currents; sputtered coatings; texture; titanium compounds; tungsten compounds; work function; 2 nm; CMOS devices; CVD TiN electrodes; CVD TiN film; MOS capacitors; MOS characteristics; TiN-SiO/sub 2/-Si; WN-SiO/sub 2/-Si; crystal orientation; flat band voltage; gate leakage currents; gate oxide; metal gate electrodes; metal penetration; preferred orientation; sputtered TiN electrodes; sputtered WN/sub x/ electrodes; stable MOS characteristics; ultrathin gate insulators; ultrathin gate oxide; work function controlled metal gate electrode; Electrodes; Heating; Insulation; Leakage current; Metal-insulator structures; Microelectronics; Paramagnetic resonance; Sputtering; Tin; Tungsten;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799357

Filename

799357