DocumentCode :
3251662
Title :
Analytical and semi-numerical models for gated FEAs
Author :
Jensen, K.L. ; Zaidman, E.G. ; Kodis, M.A. ; Goplen, B. ; Smithe, D.N.
Author_Institution :
Mission Res. Corp., Newington, VA, USA
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
216
Lastpage :
220
Abstract :
The prediction of field emitter array (FEA) device performance has been impeded by the lack of a simple methodology for comparison of disparate FEA structures. Experimental data are well characterized by the Fowler-Nordheim (FN) equation, and modeling efforts typically take advantage of this. However, numerous physical effects mitigate against simple first-principles analysis of field emission from an FEA tip, and therefore invite the question "Is FEA performance predictable?" Certain data support the notion of emission from a single, or perhaps a few, sites on a tip, in marked contrast to the idea of emission occurring continuously over a broad area. "Turn on", in which a seemingly dysfunctional tip under some subtly changing influence suddenly begins to emit, has been observed, again suggesting lack of continuity. In light of this, it appears improbable that a truly predictive and comprehensive theory or simulation analysis can he found. Before such pessimism is accepted, the fact remains that the Fowler-Nordheim characterization of experimental data is of great utility, even though the fabrication, processing, and even measurement, procedures vary widely. We must therefore ascertain what can he inferred from the experimental data through a statistical analysis.
Keywords :
electron field emission; modelling; statistical analysis; vacuum microelectronics; FEA device performance; FEA tip; Fowler-Nordheim characterization; analytical models; field emission; field emitter array; gated FEA; seminumerical models; statistical analysis; statistical model; Analytical models; Bismuth; Cathodes; Field emitter arrays; Frequency; Laboratories; Microwave antenna arrays; Performance analysis; Thermionic emission; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487028
Filename :
487028
Link To Document :
بازگشت