DocumentCode :
3251665
Title :
Modelling of adsorption-desorption noise in gas sensors using Langmuir and Wolkenstein models for adsorption
Author :
Gomri, Sami ; Seguin, J.-L. ; Guerin, Jonathan ; Aguir, K.
Author_Institution :
Lab. Materiaux et Microelectron. de Provence, Univ. Aix-Marseille, Marseille, France
fYear :
2004
fDate :
6-8 Dec. 2004
Firstpage :
198
Lastpage :
201
Abstract :
A comparison between adsorption-desorption (A-D) noise models obtained using Langmuir and Wolkenstein theories is presented. This noise is generated by instantaneous fluctuations in the number of the adsorbed molecules, which cause free electron´s density fluctuations in the sensing layer, and consequently a fluctuation in the conductance of the gas sensor. The numerical results show that the A-D noise spectrum obtained using the Wolkentein adsorption theory has a low frequency magnitude, which is greater than that of the spectrum obtained using the Langmuir theory. The presented models show that the power density spectrum of the fluctuation of the sensor´s conductance has a cut off frequency and low frequency magnitude, which are specifics of the adsorbed gas. This result confirms that conductance (or resistance) noise spectroscopy could be a useful tool for extracting information on the nature of the detected gas.
Keywords :
adsorption; desorption; electron density; fluctuations; gas sensors; noise; Langmuir adsorption theory; Langmuir model; Wolkenstein model; Wolkentein adsorption theory; adsorption-desorption noise model; adsorption-desorption noise spectrum; conductance noise spectroscopy; cut off frequency; free electron density fluctuation; gas sensors; power density spectrum; resistance noise spectroscopy; sensor conductance fluctuation; Acoustic measurements; Acoustic noise; Acoustic sensors; Electron traps; Gas detectors; Gases; Noise measurement; Semiconductor device noise; Sensor arrays; Spectroscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on
Print_ISBN :
0-7803-8656-6
Type :
conf
DOI :
10.1109/ICM.2004.1434244
Filename :
1434244
Link To Document :
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