DocumentCode :
3251752
Title :
Vertical thin-film-edge field emitters fabricated by chemical beam deposition
Author :
Hsu, D.S.Y. ; Gray, H.F.
Author_Institution :
Naval Res. Lab., Washington, DC, USA
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
222
Lastpage :
226
Abstract :
Reports a new field emitter fabrication method based on conformal chemical beam deposition. These vertical thin-film-edge structures should be fundamentally better than conical emitters in high emission currents, low voltage operation, high packing density, low angular dispersion, insensitivity to oxidation and back-ion bombardment, and they should be extremely economical to manufacture. Advantages of this approach include superior film material properties such as small grain size, low stress, oxidation resistance and low work function, as well as a vertical design geometry and simplicity requiring no precise lithography or eventually no lithography at all.
Keywords :
chemical vapour deposition; electron field emission; grain size; lithography; oxidation; vacuum microelectronics; work function; angular dispersion; back-ion bombardment; chemical beam deposition; emission currents; film material properties; grain size; lithography; oxidation; packing density; vacuum microelectronics; vertical thin-film-edge field emitters; work function; Chemicals; Fabrication; Geometry; Grain size; Lithography; Low voltage; Manufacturing; Material properties; Oxidation; Stress;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487030
Filename :
487030
Link To Document :
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