Title :
Effect of transverse magnetic field on resonant tunneling in double-barrier structure
Author :
Liu Yunpeng ; Liu Weidong ; Luo Enze
Author_Institution :
Dept. of Phys., Xidian Univ., Xi´an, China
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Summary form only given. We employ a numerical analysis to study the effects of a transverse magnetic field on the resonant tunneling in a double-barrier structure. An equivalent potential is introduced to represent the action of the transverse magnetic field, and the current-voltage characteristics are calculated.
Keywords :
tunnelling; current-voltage characteristics; double-barrier structure; equivalent potential; numerical analysis; resonant tunneling; transverse magnetic field; Magnetic fields; Magnetic resonance; Materials science and technology; Numerical analysis; Resonant tunneling devices; Voltage;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487034
