DocumentCode :
3251847
Title :
R-3 flush vs. FeRAM which is the real winner?
Author :
Ohnishi, S. ; Cappelletti, Paolo
Author_Institution :
Sharp
fYear :
1999
fDate :
14-16 June 1999
Firstpage :
114
Lastpage :
114
Abstract :
Summary form only given. Logic embedded non-volatile memories are actively developed to achieve the mobile communication tools with high performance. Flash-EEPROMs have been widely used as programmable memories mainly for Personal handy-phone. By increasing memory densities above 32Mbits, they will be applied for the data storage of the products such as CD-ROM, digital steel camera and so on.
Keywords :
CD-ROMs; Circuits; Ferroelectric films; Flash memory; Low voltage; Mobile communication; National electric code; Nonvolatile memory; Random access memory;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
Type :
conf
DOI :
10.1109/VLSIT.1999.799368
Filename :
799368
Link To Document :
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