High performance and highly reliable deep submicron CMOSFETs using nitrided-oxide

Author

Irino, K. ; Tamura, Y. ; Ohkubo, Satoru ; Nakanishi, T. ; Shigeno, M. ; Hikazutani, K.-I. ; Higashi, M. ; Fukuda, Toshio ; Takasaki, K.

Author_Institution

Fujitsu Labs. Ltd., Atsugi, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

117

Lastpage

118

Abstract

High performance and highly reliable CMOSFETs have been obtained using newly-developed nitrided-oxide processing, which features the localization of the nitrogen profile at the SiO/sub 2/-Si interface, and giving different nitrogen concentrations between the gate and LDD area. In p-MOSFETs, I/sub on/ can be increased by 12%, and I/sub off/ can be decreased by 50% compared with pure oxide. Also, in n-MOSFETs, hot carrier reliability significantly improves.

Keywords

CMOS integrated circuits; MOSFET; dielectric thin films; doping profiles; hot carriers; nitridation; semiconductor device measurement; semiconductor device reliability; CMOSFETs; LDD area; SiO/sub 2/-Si; SiO/sub 2/-Si interface; SiON-Si; gate area; highly reliable CMOSFETs; hot carrier reliability; n-MOSFETs; nitrided-oxide film; nitrided-oxide processing; nitrogen concentration; nitrogen profile localization; off current; on current; p-MOSFETs; CMOSFETs; Charge pumps; Dielectric devices; Dielectric substrates; FETs; Hot carriers; Interface states; MOSFET circuits; Nitrogen; Paper technology;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799371

Filename

799371