Title :
Improvement of 1/f noise by using VHP (vertical high pressure) oxynitride gate insulator for deep-sub micron RF and analog CMOS
Author :
Kimijima, H. ; Ohguro, Tatsuya ; Evans, B. ; Acker, B. ; Bloom, J. ; Mabuchi, H. ; Dim-Lee Kwong ; Morifuji, E. ; Yoshitomi, T. ; Momose, H.S. ; Kinugawa, M. ; Katsumata, Y. ; Iwai, H.
Author_Institution :
Microelectron. Eng. Lab., Toshiba Corp., Yokohama, Japan
Abstract :
The 1/f noise in MOSFETs using VHP (vertical high pressure) oxynitride gate insulator was studied. The 1/f noise is degraded by conventional oxynitride gate insulators. It was found that 1/f noise can be improved by using the VHP oxynitride gate insulator.
Keywords :
1/f noise; CMOS analogue integrated circuits; MOSFET; dielectric thin films; field effect MMIC; integrated circuit measurement; integrated circuit noise; microwave field effect transistors; nitridation; oxidation; semiconductor device noise; silicon compounds; 1/f noise; MOSFETs; RF CMOS; SiON-Si; VHP oxynitride gate insulator; analog CMOS; oxynitride gate insulators; vertical high pressure oxynitride gate insulator; CMOS logic circuits; Circuit noise; Degradation; Dielectrics and electrical insulation; MOSFET circuits; Microelectronics; Nitrogen; Radio frequency; Silicon; Temperature;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799372
