Title :
Sealed wedge-shaped silicon power triode
Author :
Jinshu Zhang ; Lo, T.C.
Author_Institution :
Dept. of Electr. & Electron. Eng., Hong Kong Univ., Clear Water Bay, Hong Kong
fDate :
July 30 1995-Aug. 3 1995
Abstract :
A sealed wedge-shaped silicon power triode has been fabricated by CMOS compatible technology. The fabricated field emitter has higher thermal and mechanical stability due to the Eiffel Tower shape. The sealed structure eliminates the needs for external vacuum pumping and improves the reliability and lifetime of the device. Anode currents were demonstrated at anode voltages less than 4 volts.
Keywords :
electron tube manufacture; power semiconductor devices; seals (stoppers); silicon; triodes; vacuum microelectronics; 4 V; CMOS technology; Eiffel Tower; Si; fabrication; field emitter; lifetime; mechanical stability; reliability; sealed wedge-shaped silicon power triode; thermal stability; Aluminum; Anodes; CMOS technology; Electrodes; Electron sources; Microelectronics; Resists; Silicon; Sputter etching; Wet etching;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487045
