Node connection/quantum phase-shifting mask-path to below 0.3-/spl mu/m pitch, proximity effect free random interconnect and memory patterning

Author

Fukuda, H.

Author_Institution

Central Res. Lab., Hitachi Ltd, Tokyo, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

123

Lastpage

124

Abstract

New design concepts for alternating phase-shifting masks are proposed which enable the alternating PSMs to be applied to random patterns with the least design restrictions and reduced proximity effects. Original design patterns are decomposed to several sub-patterns using geometrical operations, so that each sub-pattern can be achieved by the alternating type PSMs. The possibility of patterning sub-0.3 /spl mu/m pitch random interconnects with conventional DUV tools is shown.

Keywords

integrated circuit design; integrated circuit interconnections; integrated circuit metallisation; integrated memory circuits; phase shifting masks; proximity effect (lithography); ultraviolet lithography; 0.3 micron; DUV tools; alternating PSMs; alternating phase-shifting masks; alternating type PSMs; design pattern decomposition; design restrictions; geometrical operations; interconnect pitch; mask design; node connection/quantum phase-shifting mask; proximity effect free memory patterning; proximity effect free random interconnect patterning; proximity effects; random interconnects; random patterns; sub-patterns; Automatic logic units; Design methodology; Image reconstruction; Joining processes; Lattices; Logic design; Proximity effect; Wires;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799374

Filename

799374