New radical injection method for high-performance and chargeless dielectric etching

Author

Samukawa, S. ; Mukai, T. ; Noguchi, K.

Author_Institution

Si Syst. Res. Labs., NEC Corp., Ibaraki, Japan

fYear

1999

fDate

14-16 June 1999

Firstpage

125

Lastpage

126

Abstract

This paper proposes a "new radical injection" (selective radical generation) method for high-performance SiO/sub 2/ patterning using nonperfluorocarbon gases (CF/sub 3/I and C/sub 2/F/sub 4/) in ultrahigh frequency (UHF) plasma. This method enables independent control of polymerization and etching through the selective generation of CF/sub 2/ and CF/sub 3/ radicals. Thus it accomplishes both a high etching rate and high etching selectivity during SiO/sub 2/ contact-hole formation. The gas chemistries can also suppress charge-up damage during SiO/sub 2/ etching because a low electron temperature is maintained in the plasma.

Keywords

dielectric thin films; free radicals; integrated circuit interconnections; plasma materials processing; plasma radiofrequency heating; plasma temperature; polymerisation; silicon compounds; sputter etching; surface charging; SiO/sub 2/; SiO/sub 2/ contact-hole formation; SiO/sub 2/ etching; SiO/sub 2/ patterning; UHF plasma etching; charge-up damage suppression; chargeless dielectric etching; electron temperature; etching control; etching rate; etching selectivity; gas chemistries; new radical injection method; nonperfluorocarbon gases; polymerization control; selective fluorocarbon radical generation; selective radical generation method; Bonding; Dielectrics; Etching; Plasma applications; Plasma chemistry; Plasma density; Plasma measurements; Plasma sources; Plasma temperature; Polymers;

fLanguage

English

Publisher

ieee

Conference_Titel

VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on

Conference_Location

Kyoto, Japan

Print_ISBN

4-930813-93-X

Type

conf

DOI

10.1109/VLSIT.1999.799375

Filename

799375