Computer simulation of field emission for multilayer cathodes

Summary form only given. High efficiency of field emission can be achieved using an effect of electron spectrum quantization in a thin metal film coated emitter surface. Another way to realize this mechanism is the development of systems with built-in quantum wells, in particular, delta-doped layers. Here we have considered the case of multilayer quantum size structures with the number of quantum wells N more than 1. It turned out that in this case current-field characteristics have many important peculiarities due to the additional effect of electron resonant tunneling through the structure. The influence of quantum well and barrier parameters on emission currents is analyzed for different N. The conditions for efficient field emission at low applied voltages are found. Computer calculations are made for a multilayer Si-SiO/sub 2/ structure with the thicknesses of quantum wells and barriers d=3-5 nm. Results of calculations are compared with experiment.