Title :
Calculating work function and interface tunneling barrier from physical parameters of elements and compounds
Author :
Christensen, A.O., Sr.
Author_Institution :
Christensen Technol. Inc., Magnolia, TX, USA
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Engineering equations useful in electron source and semiconductor device design, for a) the work function of a metal; and b) the barrier between metals and n-type semiconductors, are both based on the correlations between the bulk surface energy /spl Gamma/, the Wigner-Seitz cell electron density Nws, molar volume V and polycrystalline work function /spl phi/. The correlation for 30 elements is presented graphically.
Keywords :
metal theory; semiconductor-metal boundaries; tunnelling; work function; Wigner-Seitz cell; compounds; design engineering; electron density; electron source; elements; interface tunneling barrier; metals; molar volume; n-type semiconductors; polycrystalline work function; semiconductor device; surface energy; Design engineering; Electron sources; Equations; Photonic band gap; Physics; Power engineering and energy; Semiconductor devices; Silicon compounds; Strontium; Tunneling;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487047
