DocumentCode :
3252023
Title :
Fully Depleted SOI Technology for Ultra Low Power Digital and RF Applications
Author :
Uchiyama, Akira ; Baba, Shunsuke ; Nagatomo, Yoshiki ; Ida, Jiro
Author_Institution :
Semicond. R&D Div., Oki Electr. Ind. Co. Ltd., Tokyo
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
15
Lastpage :
16
Abstract :
Today, various specifications are demanded to LSI, which is indispensable for industry and our life. For example, in the field of mobile equipments, watch and sensor devices in ubiquitous network, low-power-consumption devices are required. On the other hand, in the field of high-end processing, high performance devices are required. Silicon-on-insulator (SOI) devices have various advantages over bulk Si devices in the above-mentioned fields (Colingue, 2004). SOI-based sensors have also been introduced (Wan, 2005). In this paper, aiming for ultra-low-power digital analog and RF applications, we present major characteristics and issues of fully-depleted SOI (FD-SOI), and discuss the approaches to expanding the capability of FD-SOI devices
Keywords :
digital integrated circuits; low-power electronics; radiofrequency integrated circuits; semiconductor technology; sensors; silicon-on-insulator; RF applications; SOI sensors; Si; analog applications; fully depleted SOI; radio frequency applications; ultra low power digital applications; Capacitance; Conference proceedings; Dielectric losses; Dielectric substrates; Electrical equipment industry; Intersymbol interference; Radio frequency; Research and development; Silicon; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284409
Filename :
4062857
Link To Document :
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