Title :
Optimization of Dual-ESL Stressor Geometry Effects for High Performance 65nm SOI Transistors
Author :
Bo, Xiang-Zheng ; Grudowski, Paul ; Adams, Vance ; Loiko, Konstantin ; Tekleab, Daniel ; Filipiak, Stan ; Hackenberg, John ; Kolagunta, Venkat ; Foisy, Mark ; Lin, Li-Te ; Fung, K.H. ; Wu, Chi-Hsi ; Tuan, Hsiao-Chin ; Cheek, Jon
Author_Institution :
Austin Silicon Technol. Solutions, Freescale Semicond. Inc., Austin, TX
Abstract :
We report on the optimized transverse and lateral boundaries of dual etch stop layer (dESL) stressors in both PMOS and NMOS achieved in 65nm SOI transistors. We demonstrate that this gives an additional ~20% performance gain in ring oscillators. The optimization takes into account the 1-D and 2-D geometry effects, including poly-pitch, and is in good agreement with stress simulations
Keywords :
MOSFET; nanoelectronics; optimisation; silicon-on-insulator; 65 nm; NMOS; PMOS; SOI transistor; Si; dual etch stop layer; poly-pitch; stress simulations; stressor geometry effect optimization; Added delay; Compressive stress; Conference proceedings; Etching; Geometry; MOS devices; Performance gain; Ring oscillators; Solid modeling; Tensile stress;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284411
