Title :
Sub-quarter micron CMOS process for TiN-gate MOSFETs with TiO/sub 2/ gate dielectric formed by titanium oxidation
Author :
Hobbs, C. ; Hegde, R. ; Maiti, B. ; Tseng, H. ; Gilmer, D. ; Tobin, P. ; Adetutu, O. ; Huang, F. ; Weddington, D. ; Nagabushnam, R. ; O´Meara, D. ; Reid, K. ; La, L. ; Grove, L. ; Rossow, M.
Author_Institution :
Adv. Products Res. & Dev. Lab., Motorola Inc., Austin, TX, USA
Abstract :
We report here for the first time the integration of sub-quarter micron CMOSFETs on bulk silicon using an oxidized metal gate dielectric. A polysilicon capped physical vapor deposited (PVD) titanium nitride (TiN) was used as the gate electrode. Well behaved MOSFET characteristics were obtained. In this paper, we present results on the physical and electrical characterization of titanium dioxide (TiO/sub 2/) produced by oxidizing a thin PVD Ti film.
Keywords :
CMOS integrated circuits; MOSFET; dielectric thin films; electrodes; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; oxidation; sputter deposition; titanium compounds; CMOS process; CMOSFET integration; MOSFET characteristics; TiN-TiO/sub 2/-Si; TiN-gate MOSFETs; TiO/sub 2/ gate dielectric; bulk silicon; electrical characterization; gate electrode; oxidized metal gate dielectric; physical characterization; polysilicon capped PVD TiN gate electrode; thin PVD Ti film; titanium dioxide; titanium oxidation; Annealing; Atherosclerosis; CMOS process; Dielectrics; MOSFETs; Oxidation; Silicon; Temperature; Tin; Titanium;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799379
