Title :
Si FEA with diamond coating for vacuum microelectronics devices
Author :
Givargizov, E.I. ; Chubun, N.N. ; Zhirnov, V.V. ; Stepanova, A.N.
Author_Institution :
Inst. of Crystallogr., Acad. of Sci., Moscow, Russia
fDate :
July 30 1995-Aug. 3 1995
Abstract :
Cold cathodes based on silicon field emitter arrays with diamond coatings were fabricated. The dimensions of cathodes were from 8/spl times/8 to 25/spl times/25 mm. The sealed FEA-biased diodes were fabricated and their emission characteristics were measured. The long-life tests have been performed during 40 h of operation.
Keywords :
cathodes; cold-cathode tubes; diamond; diodes; electron field emission; elemental semiconductors; life testing; silicon; vacuum microelectronics; vacuum tubes; 40 h; 8 to 25 mm; Si-C; cold cathodes; emission characteristics; field emitter arrays; long-life tests; sealed FEA-biased diodes; vacuum microelectronics devices; Cathodes; Coatings; Conducting materials; Diodes; Fabrication; Field emitter arrays; Microelectronics; Performance evaluation; Silicon; Thermal conductivity;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487053
