Title :
Single Metal Gate with Dual Work Functions for FD-SOI and UTB Double Gate Technologies
Author :
Pham, Daniel ; Luan, Hongfa ; Mathur, Kaveri ; Sassman, Barry ; Nguyen, Billy ; Brown, George ; Yang, Ji-Woon ; Oh, Jungwoo ; Zeitzoff, Peter ; Larson, Larry
Author_Institution :
SEMATECH, Austin, TX
Abstract :
In this paper, we demonstrate an integratable single metal gate (TiSiN) on HfxSixOy with dual work functions (4.44eV and 4.83eV), achieved by varying the metal thickness. These structures may be used for FD-SOI and double gate ultra-thin body devices. Close to symmetric Vt is achieved: 0.32V and -0.37V for long channel FD-SOI nMOS and pMOS devices, respectively. The device shows good sub-threshold slope values, as low as 62mV/dec and 75mV/dec for 1mum and 0.2mum devices, respectively
Keywords :
MOSFET; hafnium compounds; high-k dielectric thin films; silicon-on-insulator; titanium compounds; work function; -0.37 V; 0.2 micron; 0.32 V; 1 micron; HfxSixOy; HfSiO; SOI; Si; TiSiN; UTB double gate technology; double gate ultra-thin body devices; dual work functions; integratable single metal gate; nMOS device; pMOS devices; single metal gate technology; Electric resistance; Fabrication; High-K gate dielectrics; Immune system; Intrusion detection; MOS devices; Silicidation; Silicon; Threshold voltage; Wet etching;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284414
