Characterization and modelling of power RF LDMOS transistor including self-heating effects

Author

Belaïd, M.A. ; Maanane, H. ; Mourgues, K. ; Masmoudi, M. ; Ketata, K. ; Marcon, J.

Author_Institution

LEMI, Rouen Univ., Mont Saint Aignan, France

fYear

2004

fDate

6-8 Dec. 2004

Firstpage

262

Lastpage

265

Abstract

In this paper, we propose a new electro-thermal model of power RF LDMOS transistor implemented in Agilent´s ADS, using symbolic defined device (SDD). The proposed model takes into account the thermal effects and influence of temperature on the I-V characteristics, by providing three thermal capacitances and three thermal resistances, which represent the heat flow from the chip to the ambient air (thermal network). It allows us to study temperature dependent shifts for some macroscopic parameters such as the threshold voltage (V_t), the transconductance (g_m), the conductance (g_d) and the on-state resistance (R_ds-on).

Keywords

microwave field effect transistors; power MOSFET; semiconductor device models; thermal resistance; I-V characteristics; electrothermal model; heat flow; macroscopic parameters; on-state resistance; power RF LDMOS transistor; symbolic defined device; temperature dependent shifts; thermal capacitance; thermal resistance; threshold voltage; transconductance; Capacitance; Electronic components; Electronic mail; Electronics industry; Heat sinks; Microelectronics; Radio frequency; Temperature dependence; Thermal resistance; Threshold voltage;

fLanguage

English

Publisher

ieee

Conference_Titel

Microelectronics, 2004. ICM 2004 Proceedings. The 16th International Conference on

Print_ISBN

0-7803-8656-6

Type

conf

DOI

10.1109/ICM.2004.1434262

Filename

1434262