Title :
Field emission of PECVD diamond like carbon thin film flat cathode on microstructured silicon pedestal
Author :
Kim, J.M. ; Choo, D.H. ; Park, N.S. ; Choi, J.H. ; Kim, J.W.
Author_Institution :
Mater. & Devices Res. Center, Samsung Adv. Inst. of Technol., Suwon, South Korea
fDate :
July 30 1995-Aug. 3 1995
Abstract :
It has been demonstrated that patterned diamond like carbon (DLC) thin film flat cathode deposited by Plasma Enhanced Chemical Vapor Deposition (PECVD) shows good field emission characteristics on microstructured silicon pedestal. This device is tested at the chamber pressure of 3.7/spl times/10/sup -6/ torr. At the anode bias of 450 volt, the emission current of 1 /spl mu/A per cathode is observed with bright phosphor flow at the electrical field intensity of 3.5 V//spl mu/m. Simulation and fabrication step show the feasibility of DLC flat cathode for the gated structure applications.
Keywords :
carbon; cathodes; diodes; electric fields; electron field emission; plasma CVD; vacuum microelectronics; 3.7E-6 torr; 450 V; C; PECVD; anode bias; chamber pressure; electrical field intensity; electron field emission; emission current; gated structure applications; microstructured pedestal; phosphor flow; thin film flat cathode; Carbon dioxide; Cathodes; Chemical vapor deposition; Diamond-like carbon; Plasma chemistry; Plasma devices; Plasma properties; Semiconductor thin films; Sputtering; Transistors;
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
DOI :
10.1109/IVMC.1995.487055
