Title :
A 0.15-/spl mu/m/73-GHz f/sub max/ RF BiCMOS technology using cobalt silicide ring extrinsic-base structure
Author :
Suzuki, H. ; Yoshida, H. ; Kinoshita, Y. ; Fujii, H. ; Yamazaki, T.
Author_Institution :
ULSI Device Dev. Labs., NEC Corp., Kanagawa, Japan
Abstract :
This paper presents an advanced RF mixed-signal BiCMOS technology. A single-polysilicon bipolar transistor with a high maximum frequency of oscillation (f/sub max/) is successfully implemented into a 0.15 /spl mu/m dual gate CMOS process. To achieve such a bipolar transistor, a cobalt silicide (CoSi/sub 2/) ring-shaped extrinsic-base structure is newly developed. This bipolar transistor demonstrates 73 GHz f/sub max/, minimum noise figure (NF/sub min/) of 1.1 dB and a cut-off frequency emitter-to-collector breakdown voltage (f/sub T//spl middot/BV/sub CEO/) product of 160 GHz/spl middot/V, which is competitive with previously reported SiGe-based technology.
Keywords :
BiCMOS integrated circuits; MMIC; cobalt compounds; electric breakdown; integrated circuit interconnections; integrated circuit measurement; integrated circuit metallisation; integrated circuit noise; 0.15 micron; 1.1 dB; 73 GHz; CoSi/sub 2/; CoSi/sub 2/ ring-shaped extrinsic-base structure; RF BiCMOS technology; RF mixed-signal BiCMOS technology; Si; SiGe-based technology; bipolar transistor; cobalt silicide ring extrinsic-base structure; cut-off frequency emitter-to-collector breakdown voltage product; dual gate CMOS process; maximum oscillation frequency; minimum noise figure; single-polysilicon bipolar transistor; BiCMOS integrated circuits; Bipolar transistors; CMOS process; CMOS technology; Cobalt; Cutoff frequency; Noise figure; Noise measurement; Radio frequency; Silicides;
Conference_Titel :
VLSI Technology, 1999. Digest of Technical Papers. 1999 Symposium on
Conference_Location :
Kyoto, Japan
Print_ISBN :
4-930813-93-X
DOI :
10.1109/VLSIT.1999.799387
