DocumentCode :
3252233
Title :
Electron microscopy analysis of amorphous and crystalline diamond coated silicon field emitters
Author :
Myers, A.F. ; Liu, J. ; McClure, M.T. ; Camphausen, S.M. ; Cuomo, J.J. ; Hren, J.J.
Author_Institution :
Dept. of Mater. Sci. & Eng., North Carolina State Univ., Raleigh, NC, USA
fYear :
1995
fDate :
July 30 1995-Aug. 3 1995
Firstpage :
325
Lastpage :
329
Abstract :
The present paper concentrates on the morphology and microstructure of the coatings, as determined from electron microscopy investigations of coated Si emitters. The microscopy techniques used in this study include scanning electron microscopy to examine the macroscopic diamond morphology; high resolution TEM to study both detailed morphology and interface structure; selected area electron diffraction to determine if the film is crystalline or amorphous and to identify the coating species; and electron energy loss spectroscopy to determine the nature of the carbon bonding-sp/sup 3/, sp/sup 2/, or amorphous-in the film.
Keywords :
diamond; electron diffraction; electron field emission; elemental semiconductors; interface structure; scanning electron microscopy; silicon; transmission electron microscopy; vacuum microelectronics; C-Si; TEM; area electron diffraction; carbon bonding; coating species; electron microscopy analysis; field emitters; interface structure; morphology; scanning electron microscopy; Amorphous materials; Coatings; Crystal microstructure; Crystallization; Electron emission; Electron microscopy; Energy resolution; Morphology; Scanning electron microscopy; Transmission electron microscopy;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
Vacuum Microelectronics Conference, 1995. IVMC., 1995 International
Conference_Location :
Portland, OR, USA
Print_ISBN :
0-7803-2143-X
Type :
conf
DOI :
10.1109/IVMC.1995.487059
Filename :
487059
Link To Document :
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