DocumentCode :
3252235
Title :
Low Frequency Noise Performance in TiN/HfO2 Fully Depleted SOI nMOSFET
Author :
Zafari, Leily ; Jomaah, J. ; Ghibaudo, Gerard ; Faynot, Olivier
Author_Institution :
IMEP, Grenoble
fYear :
2006
fDate :
2-5 Oct. 2006
Firstpage :
35
Lastpage :
36
Abstract :
The low frequency noise of TiN/HfO2 fully-depleted SOI nMOSFET is studied for different front and back gate voltages (Vg2). It is shown that depending on Vg2, SiO2 or HfO2 traps or a combination of both could dominate the capture and release of carriers in defects in the gate dielectric layer
Keywords :
MOSFET; dielectric materials; hafnium compounds; silicon-on-insulator; titanium compounds; TiN-HfO2; fully depleted SOI; gate dielectric layer; low frequency noise performance; nMOSFET; Frequency; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; MOSFET circuits; Noise level; Silicon; Tin; Voltage;
fLanguage :
English
Publisher :
ieee
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
ISSN :
1078-621X
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
Type :
conf
DOI :
10.1109/SOI.2006.284420
Filename :
4062868
Link To Document :
https://search.ricest.ac.ir/dl/search/defaultta.aspx?DTC=49&DC=3252235
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