• DocumentCode
    3252235
  • Title

    Low Frequency Noise Performance in TiN/HfO2 Fully Depleted SOI nMOSFET

  • Author

    Zafari, Leily ; Jomaah, J. ; Ghibaudo, Gerard ; Faynot, Olivier

  • Author_Institution
    IMEP, Grenoble
  • fYear
    2006
  • fDate
    2-5 Oct. 2006
  • Firstpage
    35
  • Lastpage
    36
  • Abstract
    The low frequency noise of TiN/HfO2 fully-depleted SOI nMOSFET is studied for different front and back gate voltages (Vg2). It is shown that depending on Vg2, SiO2 or HfO2 traps or a combination of both could dominate the capture and release of carriers in defects in the gate dielectric layer
  • Keywords
    MOSFET; dielectric materials; hafnium compounds; silicon-on-insulator; titanium compounds; TiN-HfO2; fully depleted SOI; gate dielectric layer; low frequency noise performance; nMOSFET; Frequency; Hafnium oxide; High K dielectric materials; High-K gate dielectrics; Low-frequency noise; MOSFET circuits; Noise level; Silicon; Tin; Voltage;
  • fLanguage
    English
  • Publisher
    ieee
  • Conference_Titel
    International SOI Conference, 2006 IEEE
  • Conference_Location
    Niagara Falls, NY
  • ISSN
    1078-621X
  • Print_ISBN
    1-4244-0289-1
  • Electronic_ISBN
    1078-621X
  • Type

    conf

  • DOI
    10.1109/SOI.2006.284420
  • Filename
    4062868
    • Link To Document
    https://search.isc.ac/dl/search/defaultta.aspx?DTC=49&DC=3252235