Title :
A miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 /spl mu/m MESFET technology
Author :
Kalayci, Y. ; Tempel, R. ; Lutke, W. ; Akpinar, Mustafa ; Wolff, I.
Author_Institution :
Inst. fur Mobil- und Satellitenfunktechnik, Kamp-Lintfort, Germany
Abstract :
This paper presents a miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 /spl mu/m GaAs-MESFET technology. To our knowledge a MESFET amplifier with 7 dB gain at Ka-band has never been shown before. In the frequency band 26.3 GHz to 28.3 GHz, the input and output return losses are better than 10 dB. The 1 dB compression point P/sub 1dB/ is higher than 23 dBm at 26.5 GHz. The single ended one-stage amplifier occupies a chip-size of 0.46/spl times/0.64 mm/sup 2/.<>
Keywords :
III-V semiconductors; MMIC power amplifiers; coplanar waveguides; field effect MMIC; gallium arsenide; power amplifiers; 0.5 micron; 26.3 to 28.3 GHz; 7 dB; CPW; GaAs; GaAs MESFET technology; Ka-band MMIC; MESFET amplifier; SHF; coplanar line technique; high-gain amplifier; medium power amplifier; Circuits; Costs; Frequency measurement; Gain; High power amplifiers; MESFETs; MMICs; Radiofrequency amplifiers; Semiconductor device measurement; Transmission line measurements;
Conference_Titel :
Microwave Symposium Digest, 1995., IEEE MTT-S International
Conference_Location :
Orlando, FL, USA
Print_ISBN :
0-7803-2581-8
DOI :
10.1109/MWSYM.1995.406287
