A miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 /spl mu/m MESFET technology

Author

Kalayci, Y. ; Tempel, R. ; Lutke, W. ; Akpinar, Mustafa ; Wolff, I.

Author_Institution

Inst. fur Mobil- und Satellitenfunktechnik, Kamp-Lintfort, Germany

fYear

1995

fDate

16-20 May 1995

Firstpage

1623

Abstract

This paper presents a miniaturized Ka-band MMIC high-gain medium power amplifier in coplanar line technique by using a conventional 0.5 /spl mu/m GaAs-MESFET technology. To our knowledge a MESFET amplifier with 7 dB gain at Ka-band has never been shown before. In the frequency band 26.3 GHz to 28.3 GHz, the input and output return losses are better than 10 dB. The 1 dB compression point P/sub 1dB/ is higher than 23 dBm at 26.5 GHz. The single ended one-stage amplifier occupies a chip-size of 0.46/spl times/0.64 mm/sup 2/.<>

Keywords

III-V semiconductors; MMIC power amplifiers; coplanar waveguides; field effect MMIC; gallium arsenide; power amplifiers; 0.5 micron; 26.3 to 28.3 GHz; 7 dB; CPW; GaAs; GaAs MESFET technology; Ka-band MMIC; MESFET amplifier; SHF; coplanar line technique; high-gain amplifier; medium power amplifier; Circuits; Costs; Frequency measurement; Gain; High power amplifiers; MESFETs; MMICs; Radiofrequency amplifiers; Semiconductor device measurement; Transmission line measurements;

fLanguage

English

Publisher

ieee

Conference_Titel

Microwave Symposium Digest, 1995., IEEE MTT-S International

Conference_Location

Orlando, FL, USA

ISSN

0149-645X

Print_ISBN

0-7803-2581-8

Type

conf

DOI

10.1109/MWSYM.1995.406287

Filename

406287