Title :
High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates
Author :
Sullivan, Jim ; Kirk, Harry R. ; Kang, Sien ; Ong, Philip J. ; Henley, Francois J.
Author_Institution :
Silicon Genesis Corp., San Jose, CA
Abstract :
Out-diffusion of the interfacial SiOx layers is clearly achievable using high temperature annealing in H2 ambient at about 1200degC. Other non-oxidizing ambient should perform equally well; provided that the surface remains free of oxide and oxygen getter sites during anneal treatment. Although both SIMS and XTEM were used to predict the out-diffusion flux and anneal time, it would appear that Cs+ SIMS out performs XTEM as a pre and post anneal metrology
Keywords :
annealing; caesium; hydrogen; secondary ion mass spectroscopy; semiconductor epitaxial layers; silicon compounds; substrates; surface diffusion; transmission electron microscopy; DSB substrates; SIMS; SiOx; XTEM; direct silicon bonded substrates; high temperature annealing; high temperature oxygen out-diffusion; hydrogen ambient; interfacial bond layer; nonoxidizing ambient; Annealing; Hydrogen; MOS devices; Metrology; Oxygen; Plasma measurements; Plasma temperature; Silicon; Substrates; Wafer bonding;
Conference_Titel :
International SOI Conference, 2006 IEEE
Conference_Location :
Niagara Falls, NY
Print_ISBN :
1-4244-0289-1
Electronic_ISBN :
1078-621X
DOI :
10.1109/SOI.2006.284422
