High Temperature Oxygen Out-Diffusion from the Interfacial SiOx Bond Layer in Direct Silicon Bonded (DSB) Substrates

Author

Sullivan, Jim ; Kirk, Harry R. ; Kang, Sien ; Ong, Philip J. ; Henley, Francois J.

Author_Institution

Silicon Genesis Corp., San Jose, CA

fYear

2006

fDate

2-5 Oct. 2006

Firstpage

39

Lastpage

40

Abstract

Out-diffusion of the interfacial SiO_x layers is clearly achievable using high temperature annealing in H₂ ambient at about 1200degC. Other non-oxidizing ambient should perform equally well; provided that the surface remains free of oxide and oxygen getter sites during anneal treatment. Although both SIMS and XTEM were used to predict the out-diffusion flux and anneal time, it would appear that Cs+ SIMS out performs XTEM as a pre and post anneal metrology

Keywords

annealing; caesium; hydrogen; secondary ion mass spectroscopy; semiconductor epitaxial layers; silicon compounds; substrates; surface diffusion; transmission electron microscopy; DSB substrates; SIMS; SiO_x; XTEM; direct silicon bonded substrates; high temperature annealing; high temperature oxygen out-diffusion; hydrogen ambient; interfacial bond layer; nonoxidizing ambient; Annealing; Hydrogen; MOS devices; Metrology; Oxygen; Plasma measurements; Plasma temperature; Silicon; Substrates; Wafer bonding;

fLanguage

English

Publisher

ieee

Conference_Titel

International SOI Conference, 2006 IEEE

Conference_Location

Niagara Falls, NY

ISSN

1078-621X

Print_ISBN

1-4244-0289-1

Electronic_ISBN

1078-621X

Type

conf

DOI

10.1109/SOI.2006.284422

Filename

4062870